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Kingston 4GB, DDR3, 1333MHz (PC3-10600), CL9, DIMM Memory, Single Rank
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Kingston 4GB, DDR3, 1333MHz (PC3-10600), CL9, DIMM Memory, Single Rank

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Product Description

Kingston 4GB, DDR3, 1333MHz (PC3-10600), CL9, DIMM Memory, Single Rank

This document describes ValueRAM's 512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 512M x 8-bit DDR3-1333 FBGA compo- nents. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers. The electrical and mechanical specifica- tions are as follows:

- JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

- VDDQ = 1.5V (1.425V ~ 1.575V)

- 667MHz fCK for 1333Mb/sec/pin

- 8 independent internal bank

- Programmable CAS Latency: 9, 8, 7, 6

- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

- Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)

- 8-bit pre-fetch

- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]

- Bi-directional Differential Data Strobe

- Internal(self) calibration: Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

- On Die Termination using ODT pin

- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C

- Asynchronous Reset

- PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)

Memory

Buffered memory type Unregistered (unbuffered)

Memory layout (modules x size) 1 x 4 GB

Internal memory 4 GB

Component for PC/server

Memory form factor 240-pin DIMM

CAS latency 9

Memory voltage 1.5 V

Memory bus 64 bit

Lead plating Gold

Module configuration 512M x 64

Row cycle time 49.125 ns

Refresh row cycle time 260 ns

Row active time 36 ns

SPD profile Yes

Memory ranking 1

ECC No

Memory clock speed 1333 MHz

Internal memory type DDR3

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Kingston 4GB, DDR3, 1333MHz (PC3-10600), CL9, DIMM Memory, Single Rank
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